๋ณธ๋ฌธ์œผ๋กœ ์ด๋™

์ธํ…” 1103

์œ„ํ‚ค๋ฐฑ๊ณผ, ์šฐ๋ฆฌ ๋ชจ๋‘์˜ ๋ฐฑ๊ณผ์‚ฌ์ „.
์ธํ…” 1103
์„ธ๋ผ๋ฏน C1103 ๋ณ€์ข…
๋ฏธ๋””์–ด ํƒ€์ž…8ย ฮผm p-MOS DRAM
์šฉ๋Ÿ‰1 ํ‚ฌ๋กœ๋น„ํŠธ
ํ‘œ์ค€18ํ•€ DIP
์ œ์ž‘์‚ฌํ—ˆ๋‹ˆ์›ฐ
์šฉ๋„HP 9800 ์‹œ๋ฆฌ์ฆˆ,[1] PDP-11,[2] MAXC[3] ๋ฐ ๊ธฐํƒ€
๊ณต๊ฐœ ๋‚ ์งœ1970๋…„ 10์›”ย (1970-10)[4]
๋‹จ์ข…1979[5]

์ธํ…” 1103(Intel 1103)์€ ์ธํ…”์ด ๊ฐœ๋ฐœํ•˜๊ณ  ์ œ์กฐํ•œ ๋™์  ๋žจ(DRAM) ์ง‘์  ํšŒ๋กœ(IC)์ด๋‹ค. 1970๋…„ 10์›”์— ์ถœ์‹œ๋œ 1103์€ ์ƒ์—…์ ์œผ๋กœ ์ด์šฉ ๊ฐ€๋Šฅํ•œ ์ตœ์ดˆ์˜ DRAM IC์˜€์œผ๋ฉฐ, ์ž๊ธฐ์ฝ”์–ด ๋ฉ”๋ชจ๋ฆฌ์— ๋น„ํ•ด ๋ฌผ๋ฆฌ์  ํฌ๊ธฐ๊ฐ€ ์ž‘๊ณ  ๊ฐ€๊ฒฉ์ด ์ €๋ ดํ–ˆ๊ธฐ ๋•Œ๋ฌธ์— ๋งŽ์€ ์‘์šฉ ๋ถ„์•ผ์—์„œ ์ž๊ธฐ์ฝ”์–ด ๋ฉ”๋ชจ๋ฆฌ๋ฅผ ๋Œ€์ฒดํ•˜์˜€๋‹ค.[6][1] 1970๋…„ ์ถœ์‹œ ๋‹น์‹œ ์ดˆ๊ธฐ ์ƒ์‚ฐ ์ˆ˜์œจ์€ ์ €์กฐํ–ˆ์œผ๋ฉฐ, 1971๋…„ ์ƒ์‚ฐ ๋งˆ์Šคํฌ์˜ 5๋ฒˆ์งธ ์Šคํ…Œํ•‘์„ ๊ฑฐ์น˜๊ณ  ๋‚˜์„œ์•ผ ๋Œ€๋Ÿ‰์œผ๋กœ ๊ณต๊ธ‰๋  ์ˆ˜ ์žˆ์—ˆ๋‹ค. ์ธํ…”์€ 1974๋…„ 6์›”์— 25๋งŒ ๋ฒˆ์งธ 1103 RAM ์นฉ์„ ์ถœํ•˜ํ•˜์˜€๋‹ค.[7]

๊ฐœ๋ฐœ

[ํŽธ์ง‘]

1969๋…„ ์œŒ๋ฆฌ์—„ ๋ ˆ๊ธฐ์ธ ์™€ ํ—ˆ๋‹ˆ์›ฐ์˜ ๋™๋ฃŒ๋“ค์€ 3-ํŠธ๋žœ์ง€์Šคํ„ฐ ๋™์  ๋ฉ”๋ชจ๋ฆฌ ์…€์„ ๋ฐœ๋ช…ํ–ˆ๊ณ  ๋ฐ˜๋„์ฒด ์‚ฐ์—…๊ณ„์— ์ƒ์‚ฐ์ž๋ฅผ ์ฐพ๊ธฐ ์‹œ์ž‘ํ–ˆ๋‹ค. ์ตœ๊ทผ ์„ค๋ฆฝ๋œ ์ธํ…” ์ฝ”ํผ๋ ˆ์ด์…˜์ด ์ด์— ์‘๋‹ตํ•˜์˜€์œผ๋ฉฐ, ์œŒ๋ฆฌ์—„ ๋ ˆ๊ธฐ์ธ ์™€ ๊ธด๋ฐ€ํžˆ ํ˜‘๋ ฅํ•˜๋˜ ์กฐ์—˜ ์นดํ”„์˜ ์ฃผ๋„ํ•˜์— 1102์™€ 1103์ด๋ผ๋Š” ๋งค์šฐ ์œ ์‚ฌํ•œ 1024๋น„ํŠธ ์นฉ ๋‘ ๊ฐ€์ง€๋ฅผ ๊ฐœ๋ฐœํ•˜์˜€๋‹ค.[8] ์ตœ์ข…์ ์œผ๋กœ 1103๋งŒ์ด ์ƒ์‚ฐ ๋‹จ๊ณ„์— ๋“ค์–ด๊ฐ”๋‹ค.

๋งˆ์ดํฌ๋กœ์‹œ์Šคํ…œ์ฆˆ ์ธํ„ฐ๋‚ด์…”๋„์€ 1971๋…„ 1103์˜ ์ฒซ ๋ฒˆ์งธ 2์ฐจ ๊ณต๊ธ‰์›์ด ๋˜์—ˆ๋‹ค.[9] ์ดํ›„ ๋‚ด์…”๋„ ์„ธ๋ฏธ์ปจ๋•ํ„ฐ, ์‹œ๊ทธ๋„คํ‹ฑ์Šค (๋ฏธ๊ตญ์˜ ๊ธฐ์—…), ์‹œ๋„ˆํ… ๋˜ํ•œ 1103์„ ์ œ์กฐํ•˜์˜€๋‹ค.

๊ธฐ์ˆ ์  ์„ธ๋ถ€ ์‚ฌํ•ญ

[ํŽธ์ง‘]
์ธํ…” i1103 ์นฉ์˜ DRAM ๋ฉ”๋ชจ๋ฆฌ ์…€
tRWC580ย ns์ž„์˜ ์ฝ๊ธฐ ๋˜๋Š” ์“ฐ๊ธฐ ์ฃผ๊ธฐ ์‹œ๊ฐ„ (ํ•œ ๋ฒˆ์˜ +ve ํ”„๋ฆฌ์ฐจ์ง€ ์—์ง€์—์„œ ๋‹ค์Œ ์—์ง€๊นŒ์ง€)
tPO300ย ns์•ก์„ธ์Šค ์‹œ๊ฐ„: ํ”„๋ฆฌ์ฐจ์ง€ ํ•˜์ด์—์„œ ์œ ํšจ ๋ฐ์ดํ„ฐ ์ถœ๋ ฅ๊นŒ์ง€
tREF2ย ms๋ฆฌํ”„๋ ˆ์‹œ ์‹œ๊ฐ„
VCC16ย V๊ณต๊ธ‰ ์ „์••
p-MOS8ย ฮผm[10]์ƒ์‚ฐ ๊ณต์ • (์‹ค๋ฆฌ์ฝ˜ ๊ฒŒ์ดํŠธ MOSFET)
์šฉ๋Ÿ‰1024x1์šฉ๋Ÿ‰ x ๋ฒ„์Šค ํญ

๊ฐ์ฃผ

[ํŽธ์ง‘]
  1. 1 2 Mary Bellis (2016๋…„ 8์›” 25์ผ). โ€œWho Invented the Intel 1103 DRAM Chipโ€. ThoughtCo.
  2. โ†‘ ใ€ŠPDP-11/45, 11/50, and 11/55 System Maintenance Manualใ€‹ (PDF). ๋””์ง€ํ„ธ ์ดํ…๋จผํŠธ ์ฝ”ํผ๋ ˆ์ด์…˜. September 1976.
  3. โ†‘ Fiala, Edward R. (May 1978). โ€œThe Maxc Systemsโ€ (PDF). ใ€ŠGitHubใ€‹. IEEE Computer Society. 2022๋…„ 10์›” 12์ผ์— ํ™•์ธํ•จ. The most significant contributor to reliability has been main-memory error correction. During the first six months of operation, we replaced about 12 failing 1Kx1 MOS RAMs per month (out of a population of 18,432 chips): this has gradually declined to about three failures a month during the last three years. However, because of error correction, a negligible number of these failures has caused crashes.
  4. โ†‘ โ€œDefining Intel: 25 Years/25 Eventsโ€ (PDF). Intel Corporation. Page 6.
  5. โ†‘ Intel Corporation, "The 1103 retires!", Intel Preview, March/April 1979, page 23
  6. โ†‘ Jacob, Bruce et al. (2008). Memory Systems: Cache, DRAM, Disk. Morgan Kaufmann Publishers. pp. 457โ€“458.
  7. โ†‘ A Milestone for the 1103
  8. โ†‘ Computer History Museum: "Oral History of Joel Karp" Interviewed by Gardner Hendrie March 3, 2003 | Atherton, California
  9. โ†‘ Tedlow, Richard S. (2006). ใ€ŠAndy Grove: The Life and Times of an Americanใ€‹. Portfolio. 141โ€“142์ชฝ. ISBNย 9781591841395.
  10. โ†‘ Lojek, Bo (2007). ใ€ŠHistory of Semiconductor Engineeringใ€‹. Springer Science & Business Media. 362โ€“363์ชฝ. ISBNย 9783540342588. The i1103 was manufactured on a 6-mask silicon-gate P-MOS process with 8 ฮผm minimum features. The resulting product had a 2,400 ฮผm2 memory cell size, a die size just under 10 mm2, and sold for around $21.